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METHOD FOR EXTRACTING CIRCUIT PARAMETER, AND METHOD AND DEVICE FOR DESIGNING SEMICONDUCTOR INTEGRATED CIRCUIT
METHOD FOR EXTRACTING CIRCUIT PARAMETER, AND METHOD AND DEVICE FOR DESIGNING SEMICONDUCTOR INTEGRATED CIRCUIT
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机译:提取电路参数的方法,以及设计半导体集成电路的方法和装置
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摘要
PROBLEM TO BE SOLVED: To enable a calculation on a finished width of highly precise wiring and a highly precise circuit simulation.;SOLUTION: This method comprises a step (102) of preparing correlation data 101 on a distance between model wiring and wiring on the same layer existing in the circumference of the model wiring, and a difference between a mask layout width of the model wiring and the finished width, and extracting a wire length and wiring width of analyzing wiring, and a distance between the analyzing wiring and wiring existing in the circumference on the same layer as the analyzing wiring, from an actual layout 100; and a step (105) of calculating wiring resistance and wiring capacity values using the finished width of the wiring obtained by referring the correlation data to a layout wiring width of the analyzing wiring, and a distance between the analyzing wiring similarly extracted and the wiring existing in the circumference of the analyzing wiring.;COPYRIGHT: (C)2006,JPO&NCIPI
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