POST PLASMA CLEAN PROCESS FOR A HARDMASK

摘要

PROBLEM TO BE SOLVED: To provide a process of manufacturing a semiconductor device including a post plasma clean process capable of sufficiently removing post etch residues associated with a hardmask.;SOLUTION: A process of manufacturing a semiconductor device that comprises a step of implementing plasma-etching 250 through a patterned hardmask layer 210 located over a semiconductor substrate 225, and forming a modified layer 210a on the hardmask layer 210; and a step of removing at least a substantial portion of the modified layer 210a by performing a post plasma clean process on the modified layer 210a.;COPYRIGHT: (C)2005,JPO&NCIPI