MAGNETORESISTANCE EFFECT ELEMENT, THIN FILM MAGNETIC HEAD, THIN FILM MAGNETIC HEAD WAFER, HEAD GIMBAL ASSEMBLY, HEAD ARM ASSEMBLY, HEAD STACK ASSEMBLY, AND HARD DISK DEVICE

摘要

PROBLEM TO BE SOLVED: To control magnetization of a synthetic pinned layer in a CPP type magnetoresistance effect element having a synthetic pinned layer, and to enable it to obtain a large magnetoresistance change.;SOLUTION: The magnetoresistance effect element 2 includes: a first ferromagnetic layer 7 wherein the magnetizing direction is fixed to the external magnetic field: a first nonmagnetic intermediate layer 8; a first magnetic layer where a second ferromagnetic layer 9 whose magnetizing direction is fixed in the opposite direction to the first ferromagnetic layer 7 is laminated in this order; a second nonmagnetic intermediate layer 10; and a laminating part wherein a second magnetic layer 11 in which a magnetizing direction changes to the external magnetic field is laminated in this order. A sense current flows through a laminating part nearly in the laminating direction. The ratio between the film thickness of the first ferromagnetic layer 7 and the film thickness of the second ferromagnetic layer 9 is 1.4 and 1.9. The ratio between the product of the saturation magnetization of the first ferromagnetic layer 7 and the film thickness and the product of the saturation magnetization of the second ferromagnetic layer 9 and the film thickness is 0.9 and 1.1.;COPYRIGHT: (C)2005,JPO&NCIPI