TRANSISTOR, METHOD FOR DEFINING CHARACTERISTICS CHANGE MODEL EQUATION THEREFOR AND METHOD FOR DETERMINING QUALITY THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a method for determining the quality of a transistor in a short time.;SOLUTION: The transistor 12 has an n-type silicon layer 22 and a p-type silicon layer 20. The p-type silicon layer 20 is provided with a base electrode 12B and an emitter electrode 12E, and n-type electrode 22 with a corrector electrode 12C. The base electrode 12B and emitter electrode 12E are separated from the corrector electrode 12C via an interlayer insulating film 18. The transistor 12 also includes an electrode 16 which is arranged to cover a current flow passage in an area of the p-type silicon layer 20 that is at least between the base electrode 12B and the emitter electrode 12E via the interlayer insulating film 18. A voltage is applied to the electrode 16 to make electric charges move vigorously into the interlayer insulating film 18. This process makes it possible to determine the quality of the transistor more quicker than in a case where no voltage is applied to the electrode 16 in determining the quality of transistor.;COPYRIGHT: (C)2005,JPO&NCIPI