MIXED CRYSTALIZED TITANIUM DIOXIDE, MULTI-LAYERED FILM STRUCTURE AND ELEMENT STRUCTURE

摘要

PROBLEM TO BE SOLVED: To provide a new compound that functions as a semiconductor layer or an insulated layer the grid constant of which is close to that of a cobalt doped titanium dioxide membrane and that does not inhibit each epitaxial growth.;SOLUTION: The subject mixed crystalized titanium dioxide is formed by mixed-crystalizing at least one of mixed crystalized substances selected from hafnium dioxide, zirconium dioxide and germanium dioxide with titanium dioxide.;COPYRIGHT: (C)2005,JPO&NCIPI