METHOD OF REGENERATING RELEASABLE WAFER AND REGENERATED WAFER

摘要

PROBLEM TO BE SOLVED: To provide a method of regenerating a releasable wafer by which the regenerating cost of the releasable wafer can be reduced by shortening the regenerating time of the wafer at the time of regenerating the wafer and, at the same time, the number of regenerating times of the wafer can be increased by reducing the margin required in regenerating the wafer.;SOLUTION: After an ion-implanted region 13b is formed in a semiconductor wafer 13 throughout the wafer 13 by implanting ions into the wafer 13, a laminate 16 is formed by superimposing the wafer 13 upon a supporting wafer 14 and a thick releasable wafer 12 obtained by separating the semiconductor wafer 13 from a thin film 17 in the ion-implanted region 13b by heat-treating the laminate 16 at a prescribed temperature is regenerated. After the releasable wafer 12 is obtained by separating the wafer 13 from the thin film 17 on the whole surface of the ion-implanted region 13b so that no step may be formed in the periphery of the wafer 12, a regenerated wafer 32 is obtained by polishing the separation surface 12a of the wafer 12. The semiconductor wafer 13 is formed to have an outside diameter D₁ smaller than that D₂ of the supporting wafer 14 by ≤4.0 mm.;COPYRIGHT: (C)2005,JPO&NCIPI