METHOD OF REGENERATING RELEASABLE WAFER AND REGENERATED WAFER

摘要

PROBLEM TO BE SOLVED: To provide a method of regenerating a releasable wafer by which the regenerating cost of the releasable wafer can be reduced by shortening the regenerating time in regenerating the wafer and, at the same time, the number of regenerating times of the wafer can be increased by reducing the margin required at the time of regenerating the wafer.;SOLUTION: The principal surface of a semiconductor wafer 13 has a main flat section 13d and a chamfered section 13c formed around the main flat section 13d. After an ion-implanted region 13b is formed in the wafer 13 by only implanting ions into the main flat section 13d, a laminate 16 is formed by superimposing the main flat section 13d upon the principal surface of a supporting wafer 14. Then a thick releasable wafer 12 obtained by separating the semiconductor wafer 13 from a thin film 17 in the ion-implanted section 13b by heat-treating the laminated 16 at a prescribed temperature is regenerated. The main flat section 13d of the semiconductor wafer 13 is formed to be protruded from the chamfered section 13c so that the section 13d may have a ring-like step 13e and the releasable wafer 12 is obtained by separating the semiconductor wafer 13 from the thin film 17 on the whole surface of the ion-implanted region 13b so that no step may be formed on the periphery of the wafer 13.;COPYRIGHT: (C)2005,JPO&NCIPI