PROCESS FOR FABRICATING SEMICONDUCTOR ELEMENT, AND PROCESS FOR PRODUCING Ti MATERIAL FOR MAGNETRON SPUTTERING SYSTEM

摘要

PROBLEM TO BE SOLVED: To suppress the leak current of a semiconductor element by employing a film composed of a high melting point metal, an alloy of a high melting point metal, a silicide of a high melting point metal, and a nitride of Ti, Ta, W, and a Ti-W alloy in a contact barrier layer or a gate electrode in order to attain a highly reliable semiconductor element.;SOLUTION: In the process for fabricating a semiconductor element, a Ti material for a magnetron sputtering system having an Al concentration not higher than 3 ppm is prepared by removing Al from a Ti material, and a contact barrier layer or a gate electrode layer having an Al content not higher than 1×10¹⁸ atoms/cm³ is formed using the Ti material by sputtering, wherein the junction depth of a source-drain region is 0.3 μm or less.;COPYRIGHT: (C)2005,JPO&NCIPI