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CHEMICAL MECHANICAL POLISHING DEVICE AND WAFER

机译:化学机械抛光设备和硅片

摘要

PROBLEM TO BE SOLVED: To provide a chemical mechanical polishing device, capable of maintaining stabilized power supplying condition to a wafer in the electrolytic polishing of the wafer having a metal film or the like, and to provide the wafer which copes with the device.;SOLUTION: The chemical mechanical polishing device pushes the wafer W with a conductive film formed on the surface thereof against a polishing pad 20, while supplying slurry, and impresses a voltage between the wafer and the polishing pad to flatten the surface, while applying electrolytic operation. An electrode 15 for supplying power to the wafer W is constituted of a base unit 15A, consisting of a member having rubber hardness of less than 90 in the rubber hardness as stipulated by JIS K6253, and a conductive layer 15B provided on the surface of the base unit and having an electric resistance of less than 100 Ω.;COPYRIGHT: (C)2006,JPO&NCIPI
机译:解决的问题:提供一种化学机械抛光装置,该化学机械抛光装置能够在具有金属膜等的晶片的电解抛光中维持对晶片的稳定供电状态,并提供应对该装置的晶片。解决方案:化学机械抛光装置在供给浆料的同时,将在其表面上形成有导电膜的晶片W推向抛光垫20,并在施加电解操作的同时在晶片和抛光垫之间施加电压以使表面平坦。用于向晶片W供电的电极15由基本单元15A构成,该基本单元由橡胶硬度小于JIS K6253规定的橡胶硬度小于90的构件和设置在晶片表面上的导电层15B构成。基本单元且电阻小于100Ω..版权所有:(C)2006,JPO&NCIPI

著录项

  • 公开/公告号JP2005317625A

    专利类型

  • 公开/公告日2005-11-10

    原文格式PDF

  • 申请/专利权人 TOKYO SEIMITSU CO LTD;

    申请/专利号JP20040131325

  • 发明设计人 FUJITA TAKASHI;KINOSHITA OSAMU;

    申请日2004-04-27

  • 分类号H01L21/304;B24B37/00;B24B37/04;

  • 国家 JP

  • 入库时间 2022-08-21 22:32:14

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