QUANTUM DOT FIELD EFFECT TRANSISTOR, MEMORY ELEMENT AND OPTICAL SENSOR USING SAME, AND INTEGRATED CIRCUIT USING THEM

摘要

PROBLEM TO BE SOLVED: To obtain a high-integration, high-speed optical input memory, and a field effect transistor which realizes a high-sensitivity optical sensor.;SOLUTION: A quantum dot field effect transistor comprises a tunnel SiO₂ film provided on a Si layer, a multi-stage quantum dot layer 204 of at least two, alternately-stacked layers of a Si quantum dot layer a SiO₂ film provided on the tunnel SiO₂ film, a high-dielectric-constant insulating layer 206 provided on the multi-stage quantum dot layer, an impurity semiconductor provided on the high-dielectric-constant insulating layer, and a gate electrode layer made of a semi-transparent metal.;COPYRIGHT: (C)2006,JPO&NCIPI