RF INDUCTION PLASMA SOURCE APPARATUS FOR PLASMA TREATMENT

摘要

PPROBLEM TO BE SOLVED: To provide a plasma source apparatus capable of being integrated into semiconductor treatment equipment so as to generate uniform and high density plasma in a wide range of an operating condition. PSOLUTION: The plasma source apparatus has a treatment chamber and a coil for generating a whistler wave in the treatment chamber. The coil is composed of a plurality of parallel lines with at least three different lengths. PCOPYRIGHT: (C)2005,JPO&NCIPI