TANTALUM NITRIDE THIN-FILM RESISTOR AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a tantalum nitride thin-film resistor that is improved in accuracy and stabilized with time by a simple method by suppressing the TCR to a small value as much as possible over the whole region of used temperatures by also paying attention to the contact resistance of an electrode film.;SOLUTION: In a structure in which the electrode film 4 is formed on a thin tantalum nitride film 2 formed on an insulating substrate 1 through an intermediate film 3, the sum of a first temperature coefficient of resistance which is the combined temperature coefficient of resistance of the intermediate film 3 and electrode film 4, and a second temperature coefficient of resistance which is the temperature coefficient of resistance of the thin-film resistor, is adjusted to -10-0 ppm/°C. In addition, Ti, Au, and AlN are respectively used as the materials of the intermediate film 3, electrode film 4, and insulating substrate 1.;COPYRIGHT: (C)2005,JPO&NCIPI