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In grinding manner of the chamfer aspect of the semiconductor wafer and the chamfer aspect

机译:半导体晶片的倒角方面和倒角方面的研磨方式

摘要

PROBLEM TO BE SOLVED: To provide a method and device for polishing the chamfering surface of a semiconductor wafer unlikely to generate micro-flaws on the chamfering surface after being ground and capable of maintaining the shape of the chamfered surface and enhancing its flatness. ;SOLUTION: Together with an abrasive material, an abrasive thread 12 is pressed relatively to the chamfering surface of a silicon wafer W, and from the chamfering surface, splinters and fragments of mono-crystalline silicon are satisfactorily torn off. The polish thread 12 has a smaller surface area than any conventional abrasive cloth. Even if the torn-off splinters, etc., attach to the abrasive thread 12, they are removed from the thread 12 simply and exhausted to outside the silicon wafer W. Accordingly it is not likely to generate micro-flaws on the chamfering surface after being ground. It is also possible to maintain the shape of the chamfered surface and enhance its flatness.;COPYRIGHT: (C)2000,JPO
机译:解决的问题:提供一种抛光半导体晶片的倒角表面的方法和装置,该半导体晶片的倒角表面在研磨后不太可能在倒角表面上产生微瑕疵,并且能够保持倒角表面的形状并提高其平坦度。解决方案:相对于硅晶片W的倒角表面,将研磨线12与研磨材料一起压紧,并从倒角表面令人满意地撕下单晶硅的碎片和碎片。抛光线12的表面积小于任何常规的研磨布。即使撕裂的碎片等附着在磨料丝12上,也可以简单地将它们从磨丝12上除去,并排到硅晶片W的外部。因此,在磨削后的倒角表面上不可能产生微缺陷。被磨碎。还可以保持倒角表面的形状并提高其平整度。;版权所有:(C)2000,JPO

著录项

  • 公开/公告号JP3707025B2

    专利类型

  • 公开/公告日2005-10-19

    原文格式PDF

  • 申请/专利权人 株式会社SUMCO;

    申请/专利号JP19980367626

  • 发明设计人 大井 浩之;

    申请日1998-12-24

  • 分类号H01L21/304;B24B9/00;B24B21/16;

  • 国家 JP

  • 入库时间 2022-08-21 22:29:55

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