And method of the reference voltage generating system that is based on the average of the voltage of the dual-bit reference cell that is programmed for two complementary

摘要

The system and method of reading as appropriate (10) multi-bit memory cell in a memory device is provided. Reference cell and a second (70) the first reference cell (72) is used to determine an average dynamic reference value. Bits unprogrammed (72) the second reference cells, or, the average dynamic reference value by reading the bits are erased in order to read the programmed bit reference cell (70), to determine the average dynamic reference value It is determined by. Average dynamic reference value are available for determining which of unprogrammed state and a state in which the data cell is programmed.