首页> 外国专利> MULTIPLE STAGE MULTIPLE-EXPOSURE LITHOGRAPHIC SYSTEM, AND METHOD FOR INCREASING THROUGHPUT IN MULTIPLE STAGE MULTIPLE-EXPOSURE LITHOGRAPHIC SYSTEM

MULTIPLE STAGE MULTIPLE-EXPOSURE LITHOGRAPHIC SYSTEM, AND METHOD FOR INCREASING THROUGHPUT IN MULTIPLE STAGE MULTIPLE-EXPOSURE LITHOGRAPHIC SYSTEM

机译:多阶段多曝光光刻系统以及在多阶段多曝光光刻系统中增加吞吐量的方法

摘要

PROBLEM TO BE SOLVED: To increase throughput in a dual substrate stage double-exposure lithography.;SOLUTION: A process treatment of first wafer pairs is performed, the wafers of the first wafer pairs are exchanged, and each wafer is patterned by a first reticle sequentially. The first reticle is exchanged for a second reticle, the wafers of the first wafer pairs are exchanged, and each wafer is sequentially patterned by the second reticle. The first wafer pairs are exchanged for second wafer pairs, the process treatment of the second wafer pairs is performed, the wafers of the second wafer pairs are exchanged, and each wafer is sequentially patterned by the second reticle. The first reticle is exchanged for the second reticle, the wafers of the second wafer pairs are exchanged, and each wafer is sequentially patterned by the first reticle.;COPYRIGHT: (C)2005,JPO&NCIPI
机译:解决的问题:为了在双衬底阶段双曝光光刻中提高生产量;解决方案:对第一对晶片进行工艺处理,更换第一对晶片,并通过第一掩模版对每个晶片进行构图按顺序。第一掩模版被替换为第二掩模版,第一晶片对中的晶片被替换,并且每个晶片被第二掩模版依次图案化。将第一晶片对替换为第二晶片对,执行第二晶片对的处理处理,交换第二晶片对的晶片,并且每个晶片由第二掩模版依次图案化。第一掩模版被替换为第二掩模版,第二晶片对中的晶片被替换,并且每个晶片被第一掩模版顺序地图案化。;版权:(C)2005,JPO&NCIPI

著录项

  • 公开/公告号JP2005057292A

    专利类型

  • 公开/公告日2005-03-03

    原文格式PDF

  • 申请/专利权人 ASML HOLDING NV;

    申请/专利号JP20040228251

  • 发明设计人 DE KLERK JOS;GALBURT DANIEL;

    申请日2004-08-04

  • 分类号H01L21/027;G03F7/20;

  • 国家 JP

  • 入库时间 2022-08-21 22:29:30

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