GaN-based heterojunction field effect transistor and method for controlling its characteristics

摘要

PROBLEM TO BE SOLVED: To provide a structure of a heterojunction field-effect transistor of a semiconductor of a wide-band gap system by which negative resistance can be developed with high controllability.;SOLUTION: An n-type GaN layer is provided near a two-dimensional electronic channel which is formed at AlGaN/GaN heterojunction, and a drain electrode is simultaneously brought into contact with the AlGaN layer and the n-type GaN layer of the surface.;COPYRIGHT: (C)2003,JPO