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SLIMMING MANUFACTURING METHOD AND SLIMMING SYSTEM

机译:减肥制造方法及减肥系统

摘要

PROBLEM TO BE SOLVED: To improve the variations of the line width over the entire surface of a wafer with respect to a slimming manufacturing method and a slimming method for slimming the line width formed on the wafer.;SOLUTION: The method has a first exposure step of repeating exposure of the entire part or one part of a region of a pattern to be slimmed on a resist-applied wafer, a first ion slimming step of performing ion slimming after development, a second exposure step of repeating exposure of the entire part or only one part of the region of the pattern of a predetermined shot after removing the resist and applying resist on the entire surface of the wafer, a second ion slimming step of performing ion slimming on the entire surface of the wafer after development, and a step of removing the resist.;COPYRIGHT: (C)2005,JPO&NCIPI
机译:解决的问题:相对于减薄制造方法和减薄晶片上形成的线宽的减薄方法,改善晶片整个表面上的线宽变化;解决方案:该方法具有首次曝光重复曝光要涂覆抗蚀剂的晶片上要被减薄的图案的整个部分或一部分区域的步骤,在显影后执行离子减薄的第一离子减薄步骤,重复整个部分的曝光的第二曝光步骤在去除抗蚀剂并在晶片的整个表面上施加抗蚀剂之后,或者预定拍摄图案的区域的仅一部分,或者在显影之后在晶片的整个表面上进行离子减薄的第二离子减薄步骤,以及去除抗蚀剂的步骤;版权所有:(C)2005,JPO&NCIPI

著录项

  • 公开/公告号JP2005038952A

    专利类型

  • 公开/公告日2005-02-10

    原文格式PDF

  • 申请/专利权人 FUJITSU LTD;

    申请/专利号JP20030198192

  • 发明设计人 ITO TAKASHI;

    申请日2003-07-17

  • 分类号H01L21/027;C23F4/00;G03F7/40;

  • 国家 JP

  • 入库时间 2022-08-21 22:29:01

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