Semiconductor memory and operating modes associated therewith has an improved read device

摘要

Preferably at 16 to 32 pieces of the memory cell, the selection transistor in the group of memory cells (2) are, in each case, are inserted into the lead wire of the memory cell (4). In order to read, while the selection transistors of the row group is opened, the control gates of all the rows are at a low potential, each column of the current to be read flow through the row group, it is measured and stored. In a second step, the control gates of a row to be read out (5) is to a higher read potential, the resulting current is compared to the previous current. .BACKGROUND 2