To provide a process for the preparation of (MIS) transistor-insulator-semiconductor - Si containing metal to prevent by reducing the heat balance of the present invention relates sidewall oxidation process, the polycrystalline grain of the gate conductor is increased significantly. By sending the oxidation process the transistor structure comprising [SOLUTION] silicon substrate (10), a gate dielectric layer applied thereto and (12), the polysilicon gate thereon and (14) the side walls (16 I will form a). By using atomic oxygen as the oxidizing atmosphere, the heat balance of the sidewall oxidation process of the present invention, is reduced in the order of one or two digits than the sidewall oxidation process of the prior art. The present invention, the crystal grain size of about 0.1, and preferably also provides Si-based MIS transistor having a gate conductor of 0.05μm or less.
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