HIGH-TEMPERATURE ANNEALING OF SPIN-COATED PR1-XCAXMNO3 THIN FILM FOR RRAM APPLICATION

摘要

PPROBLEM TO BE SOLVED: To form a PCMO thin-film having bipolar electric-pulse switching characteristics used for a RRAM application. PSOLUTION: The method for forming a PCMO thin-film in a RRAM device includes: forming a lower electrode on a metal barrier layer on a substrate; spin-coating a PrSB1-x/SBCaSBx/SBMnOSB3/SBlayer on the lower electrode, using a PCMO precursor; baking the PCMO thin-film in at least one baking step; annealing the PCMO thin-film in a first annealing step, after each spin-coating step; performing the spin-coating step, baking step, and first annealing step repeatedly to obtain the desired thickness of the PCMO thin-film; and annealing the PCMO thin-film in a second annealing step, thereby generating a PCMO thin-film having a crystal structure of PrSB1-X/SBCaSBX/SBMnOSB3/SB, where X is such that 0.2≤X≤0.5. PCOPYRIGHT: (C)2005,JPO&NCIPI