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The porcelain constituent for high frequency, the porcelain and its production manner null for high frequency

机译:高频瓷成分,瓷及其生产方式对高频无效

摘要

PROBLEM TO BE SOLVED: To provide a porcelaneous composition, capable of being sintered at 800-1,000°C, having low permittivity, low dielectric loss and thermal expansion coefficient approximate to chip parts (e.g. GaAs) and printed boards, and useful for insulating layers of high-frequency wiring boards capable of reliably being mounted by the parts or the boards. ;SOLUTION: This porcelaneous composition is a mixture comprising (A) 50-95 wt.% glass powder capable of separating out spinel oxide crystalline phase containing SiO2, Al2O3, MgO, ZnO and B2O3, (B) 0-30 wt.% SiO2 and (C) 0.1-50 wt.% compound oxide between SrO and SiO2. The composition is molded and is sintered at 800-1,000°C to form porcelains containing (i) spinel oxide crystalline phase (SP) such as spinel, (ii) SiO2 crystalline phase (Si) such as; quartz and (iii) compound oxide crystalline phase (SL) (e.g. slawsonite) containing Sr, Al and Si and having ≥5.5 ppm/°C thermal expansion coefficient at the temperature between the room temperature and 400°C.;COPYRIGHT: (C)2000,JPO
机译:解决的问题:提供一种能够在800-1,000℃下烧结,具有低的介电常数,低的介电损耗和接近于芯片部件(例如,GaAs)和印刷电路板的热膨胀系数的陶瓷组合物,其可用于绝缘能够可靠地通过零件或电路板安装的高频布线板层。 ;解决方案:该多孔组合物是一种混合物,包含(A)50-95 wt%的玻璃粉末,该玻璃粉末能够分离出包含SiO2,Al2O3,MgO,ZnO和B2O3的尖晶石氧化物结晶相,(B)0-30 wt%的SiO2 (C)SrO和SiO2之间的0.1-50wt。%的复合氧化物。将该组合物模制并在800-1,000℃下烧结以形成包含以下的瓷器:(i)尖晶石氧化物晶相(SP),例如尖晶石;(ii)SiO2晶相(Si),例如;石英和(iii)含有Sr,Al和Si且在室温至400°C之间的温度下具有≥5.5ppm /°C的热膨胀系数的复合氧化物结晶相(SL)(例如,钠锌矿):日本特许(C)2000

著录项

  • 公开/公告号JP3663300B2

    专利类型

  • 公开/公告日2005-06-22

    原文格式PDF

  • 申请/专利权人 京セラ株式会社;

    申请/专利号JP19980175915

  • 发明设计人 川井 信也;寺師 吉健;

    申请日1998-06-23

  • 分类号C04B35/18;C03C10/02;H01L23/15;H05K1/03;

  • 国家 JP

  • 入库时间 2022-08-21 22:27:56

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