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Operation method of the flash memory cell and this kind of flash memory cell which possess the pad floating gate

机译:具有焊盘浮置栅极的闪存单元的操作方法和这种闪存单元

摘要

This invention, the floating gate which is arranged in the trench (FG) with, the source electrode (S) the drain electrode the floating gate which (D) is connected (FG) the epitaxial channel layer which is imbedded (EPI) with, channel layer (EPI) the selective gate which is arranged on (CG) with the program possible read-only memory which it possesses (MC) is something regarding.
机译:在本发明中,在沟槽(FG)中配置有浮置栅极,在其源极(S)上设置有漏电极,在其(D)上连接有嵌入(EPI)的外延沟道层(FG)的浮置栅极,关于通道层(EPI),选择的门与它具有的可能的只读存储器(MC)一起布置在(CG)上(CG)。

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