首页> 外国专利> To possess the applied device null evacuation opening and material gas introduction means of selection

To possess the applied device null evacuation opening and material gas introduction means of selection

机译:拥有所应用的装置的零疏散口和选择原料气的方式。

摘要

PROBLEM TO BE SOLVED: To provide a film deposition method and a film deposition system by which a deposition film having a higher polymerization degree and higher purity can easily be obtained. ;SOLUTION: An organic gas or an organometallic gas is introduced into the space between the anode and the cathode. Glow discharge is generated by direct current voltage applid to the space between the anode and the cathode, and a film is deposited on the surface of a test sample by organic molecular ions or metallic atom ions converted into cations in a negative glow phase region. In this system, the cathode is provided with an opening, and the film is deposited on the surface of the test sample by the organic molecular ions or metallic atom ions accelerated in the negative glow region to pass through the opening.;COPYRIGHT: (C)2003,JPO
机译:解决的问题:提供一种膜沉积方法和膜沉积系统,通过该膜沉积方法和膜沉积系统可以容易地获得具有更高聚合度和更高纯度的沉积膜。 ;解决方案:将有机气体或有机金属气体引入阳极和阴极之间的空间。通过在阳极和阴极之间的空间上施加直流电压来产生辉光放电,并且通过有机分子离子或金属原子离子在负辉光相区域中转化为阳离子,在测试样品的表面上沉积一层膜。在该系统中,阴极设有一个开口,通过在负辉光区域加速的有机分子离子或金属原子离子通过该开口将薄膜沉积在测试样品的表面上。 )2003年,日本特许厅

著录项

  • 公开/公告号JP3597494B2

    专利类型

  • 公开/公告日2004-12-08

    原文格式PDF

  • 申请/专利权人 田中 昭;

    申请/专利号JP20010247365

  • 发明设计人 田中 昭;

    申请日2001-08-16

  • 分类号C23C16/503;

  • 国家 JP

  • 入库时间 2022-08-21 22:26:25

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号