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Semiconductor device having a dummy active region for controlling high density plasma chemical vapor deposition
Semiconductor device having a dummy active region for controlling high density plasma chemical vapor deposition
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机译:具有用于控制高密度等离子体化学气相沉积的伪有源区的半导体器件
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摘要
A dummy active region is formed in which abrading processes are averaged. A semiconductor device is characterized in that an active region for forming an actual device, a device separation region being formed by a trench, and a dummy active region formed substantially in a rectangular shape are included, and the length of the short side of the dummy active region is less than 1 μm.
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