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Method of manufacturing potassium niobate single crystal thin film, surface acoustic wave element, frequency filter, frequency oscillator, electronic circuit, and electronic apparatus

机译:铌酸钾单晶薄膜的制造方法,声表面波元件,频率滤波器,频率振荡器,电子电路以及电子设备

摘要

A method of manufacturing KNbO3 single crystal thin film having single-phase high quality and excellent morphology on each of single crystal substrates. A surface acoustic wave element, frequency filter, frequency oscillator, electronics circuit, and electronic device employ the thin film manufactured by the method, and have high k2, and are wideband, reduced in size and economical in power consumption. A plasma plume containing K, Nb, and O in the range 0.5≦x≦xE is supplied to a substrate, where x is a mole ratio of niobium (Nb) to potassium (K) in KxNb1-xOy, and xE is a mole composition ratio at the eutectic point for KNbO3 and 3K2O.Nb2O5 under a predetermined oxygen partial pressure. Maintaining the temperature Ts of the substrate in the range TE≦Ts≦Tm where TE represents the temperature at the eutectic point and Tm represents a complete melting temperature, the KNbO3 single crystal is precipitated from the KxNb1-xOy deposited on the substrate.
机译:一种在每个单晶衬底上制造具有单相高质量和优良形态的KNbO 3 单晶薄膜的方法。表面声波元件,频率滤波器,频率振荡器,电子电路和电子设备采用通过该方法制造的薄膜,并且具有高的k 2 ,并且宽带,尺寸减小并且经济。能量消耗。将包含K,Nb和O范围为0.5≤x≤x E 的等离子羽流提供给基板,其中x是K中铌(Nb)与钾(K)的摩尔比 x Nb 1-x O y ,x E 是KNbO在共晶点的摩尔组成比在预定的氧分压下 3 和3K 2 O.Nb 2 O 5 。将基板的温度T s 保持在T E ≦T s ≦T m 的范围内,其中T < Sub> E 表示共晶点的温度,T m 表示完全熔化的温度,KNbO3单晶从K x Nb 1-x O y 沉积在基板上。

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