Process for passivating polysilicon and process for fabricating polysilicon thin film transistor

摘要

A process for passivating polysilicon and a process for fabricating a polysilicon thin film transistor. A polysilicon layer is formed. Next, high-pressure annealing is performed using a fluorine-containing gas, a chlorine-containing gas, an oxygen-containing gas, a nitrogen-containing gas, or mixtures thereof to passivate the polysilicon layer.