A thin film device, such as an intravascular stent, is disclosed. The device is formed of a seamless expanse of thin-film (i) formed of a sputtered nitinol shape memory alloy, defining, in an austenitic state, an open, interior volume, having a thickness between 0.5-50 microns, having an austenite finish temperature Af below 37° C.; and demonstrating a stress/strain recovery greater than 3% at 37° C. The expanse can be deformed into a substantially compacted configuration in a martensitic state, and assumes, in its austenitic state, a shape defining such open, interior volume. Also disclosed is a sputtering method for forming the device.
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机译：公开了一种诸如血管内支架的薄膜装置。该设备由溅射镍钛合金形状记忆合金形成的无缝薄膜（i）形成，该薄膜在奥氏体状态下定义了开放的内部体积，其内部厚度为0.5-50微米，具有奥氏体涂层温度A f 低于37°C;并在37℃下显示出大于3％的应力/应变回复。该膨胀片可以在马氏体状态下变形为基本上压紧的构造，并且在其奥氏体状态下呈现限定了这种开放内部体积的形状。还公开了用于形成器件的溅射方法。
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