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Method for forming interconnection line in semiconductor device and interconnection line structure
Method for forming interconnection line in semiconductor device and interconnection line structure
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机译:在半导体器件中形成互连线的方法和互连线结构
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摘要
Methods for forming an interconnection line and interconnection line structures are disclosed. The method includes forming an interlayer insulating layer on a semiconductor substrate, wherein the interlayer insulating layer is formed of a carbon-doped low-k dielectric layer. An oxidation barrier layer is formed on the interlayer insulating layer. An oxide capping layer is formed on the oxidation barrier layer. A via hole is in the oxide capping layer, the oxidation barrier, and the interlayer insulating layer. A conductive layer pattern is formed within the via hole.
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