Methods of forming a high germanium concentration silicon germanium alloy by epitaxial lateral overgrowth and structures formed thereby

摘要

A method of forming a high germanium concentration, low defect density silicon germanium film and its associated structures is described, comprising forming a dielectric layer on a substrate, patterning the dielectric layer to form a silicon region and at least one dielectric region, and forming a low defect silicon germanium layer on at least one dielectric region.