首页>
外国专利>
Reference circuit implemented to reduce the degradation of reference capacitors providing reference voltages for 1T1C FeRAM devices
Reference circuit implemented to reduce the degradation of reference capacitors providing reference voltages for 1T1C FeRAM devices
展开▼
机译:实施参考电路以减少为1T1C FeRAM器件提供参考电压的参考电容器的退化
展开▼
页面导航
摘要
著录项
相似文献
摘要
A semiconductor memory comprises a first capacitor for storing digital data connecting a cell plate line to a first bit-line through a first select transistor. The first select transistor is activated through a connection to a word line. At least one reference capacitor provides a reference voltage to a reference bit-line. A sense amplifier connected to the first and reference bit-lines measures a differential read signal on the first and reference bit-lines. A toggle flip flop alternately changes the polarization of charge stored on the reference capacitors.
展开▼