Method of preparing a surface of a semiconductor wafer to make it epiready

摘要

The invention concerns a method of preparing the surface of a semiconductor wafer intended for microelectronics and/or optoelectronics applications. In particular, a method of preparing a SiC surface of a semiconductor wafer to make it epiready is described. The technique includes annealing the wafer in an oxidizing atmosphere, and polishing a surface of the wafer with an abrasive based on particles of colloidal silica to make the SiC wafer surface suitable for homoepitaxy or heteroepitaxy.