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Process method for achieving uniform stress free electro-polishing across a copper plated wafer

机译:在整个镀铜晶片上实现均匀无应力电抛光的工艺方法

摘要

A method of electro-polishing a copper plated wafer. The method includes providing an opening which is at least as long as the copper plated wafer. The method includes dispensing an electrolyte through the opening such that the electrolyte contacts the copper plated wafer, and while dispensing the electrolyte through the opening, relative movement is effected between the opening and the copper plated wafer. The opening can have a uniform width, be convex, concave, or take any other shape depending on the application. The copper plated wafer can be moved linearly across the opening and can also be rotated. The electrolyte can be delivered to a process tank having a containment device thereon which provides the opening. As such, the opening functions an overflow weir.
机译:一种电抛光镀铜晶片的方法。该方法包括提供至少与镀铜晶片一样长的开口。该方法包括通过开口分配电解质,使得电解质接触镀铜晶片,并且当通过开口分配电解质时,在开口和镀铜晶片之间实现相对运动。根据应用,开口可以具有均匀的宽度,可以是凸的,凹的或采取任何其他形状。镀铜晶片可以在开口上线性移动,也可以旋转。可以将电解质输送到在其上具有提供开口的容纳装置的处理罐中。这样,开口起到溢流堰的作用。

著录项

  • 公开/公告号US2004245119A1

    专利类型

  • 公开/公告日2004-12-09

    原文格式PDF

  • 申请/专利权人 REDER STEVEN;BERMAN MICHAEL;

    申请/专利号US20030454944

  • 发明设计人 MICHAEL BERMAN;STEVEN REDER;

    申请日2003-06-05

  • 分类号B23H3/00;

  • 国家 US

  • 入库时间 2022-08-21 22:22:44

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