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Selective chemical-mechanical polishing properties of a cross-linked polymer and specific applications therefor

机译:交联聚合物的选择性化学机械抛光性能及其特定应用

摘要

The present invention is directed, in general, to a method of polishing a surface on substrates, such as semiconductor wafers and, more specifically, to a polishing pad suitable for this purpose. The polishing pad comprises a polishing body that includes a cross-linked polymer material, and may be incorporated into a polishing apparatus. Polishing includes positioning the substrate containing at least one layer against the polishing body and polishing the layer.
机译:总体上,本发明涉及一种抛光衬底上的表面的方法,所述衬底例如是半导体晶片,并且更具体地,涉及一种适于该目的的抛光垫。抛光垫包括抛光体,该抛光体包括交联的聚合物材料,并且可以结合到抛光设备中。抛光包括将包含至少一层的基材抵靠抛光体定位并抛光该层。

著录项

  • 公开/公告号US2005095865A1

    专利类型

  • 公开/公告日2005-05-05

    原文格式PDF

  • 申请/专利权人 YAW S. OBENG;EDWARD M. YOKLEY;

    申请/专利号US20040999607

  • 发明设计人 EDWARD M. YOKLEY;YAW S. OBENG;

    申请日2004-11-29

  • 分类号H01L21/302;H01L21/461;

  • 国家 US

  • 入库时间 2022-08-21 22:21:36

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