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Strained silicon MOSFETs having reduced diffusion of n-type dopants
Strained silicon MOSFETs having reduced diffusion of n-type dopants
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机译:减少了n型掺杂剂扩散的应变硅MOSFET
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摘要
Processing is performed during fabrication of a strained silicon NMOS device to create point defects in silicon germanium portions of source regions, and optionally of drain regions, prior to activation of source and drain region dopants. The point defects retard diffusion of the n-type dopants in the silicon germanium material, effectively lengthening the duration of the diffusivity transient region and resulting in lower overall dopant diffusivity during activation.
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