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Method for forming TiSiN film, diffusion preventive film comprising TiSiN film, semiconductor device and its production method, and apparatus for forming TiSiN film
Method for forming TiSiN film, diffusion preventive film comprising TiSiN film, semiconductor device and its production method, and apparatus for forming TiSiN film
A TiSiN film is used as a barrier metal layer for a semiconductor device to prevent the diffusion of Cu. The TiSiN film is formed by a plasma CVD process or a thermal CVD process. TiCl4 gas, a silicon hydride gas and NH3 gas are used as source gases for forming the TiSiN film by the thermal CVD process. TiCl4 gas, a silicon hydride gas, H2 gas and N2 gas are used as source gases for forming a TiSiN film by the plasma CVD process.
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