Aqueous ammonium hydroxide amorphous silicon etch method for forming microelectronic capacitor structure

摘要

Within a method for fabricating a capacitor structure within a microelectronic fabrication there is formed a capacitor structure comprising a pair of capacitor plate layers separated by a capacitor dielectric layer. Within the method, at least one of the pair of capacitor plates is formed of a doped amorphous silicon material formed incident to isotropic etching within an etchant solution comprising aqueous ammonium hydroxide, without hydrogen peroxide.