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Depth of focus (DOF) for trench-first-via-last (TFVL) damascene processing with hard mask and low viscosity photoresist
Depth of focus (DOF) for trench-first-via-last (TFVL) damascene processing with hard mask and low viscosity photoresist
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机译:使用硬掩模和低粘度光刻胶进行沟槽先到后(TFVL)镶嵌加工的焦深(DOF)
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摘要
A method is provided, the method comprising forming a dielectric layer above a structure layer, forming a hard mask layer above the dielectric layer, and forming at least one trench opening and at least one upper portion of a first via opening in the dielectric layer through the hard mask layer. The method also comprises forming a low viscosity photoresist layer above the at least one trench opening and the at least one upper portion of the first via opening in the dielectric layer.
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