Semiconductor component manufacturing plant with ventilated false floor

摘要

According to the invention, a semiconductor component manufacturing plant is constructed in a building having an upper storey and a lower storey separated from one another by a support slab and a false floor. The support slab has passageway openings, whilst the false floor consists of plates themselves having through passages. Vacuum generation means are disposed in an intermediate space situated between the support slab and the false floor which itself carries a process chamber situated in the upper space constituting a clean room. Suction means situated in the lower storey create a gaseous flow directed downwards from the clean room through the intermediate space to the lower storey. In this way, the false floor acts as a non-return mechanism for noise, thermal or chemical pollution coming from the vacuum generation means.