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Radio frequency monolithic power amplifier layout techniques

机译:射频单片功率放大器布局技术

摘要

Radio frequency monolithic power amplifier layout techniques for the purpose of the invention is for improved thermal and electrical performance of RF monolithic power amplifiers. The inventive device includes the main components of the invention is to exploit layout techniques to improve the thermal and electrical performances. A technique, named input feeding phase equalizer, is invented to achieve better heat dissipating performance. A second technique, named grounding equalizer, is invented to achieve better electrical performance. A third technique, named staggered transistor column, is invented to achieve better heat dissipation performance. The electrical length between the input to the input stage of a 2n-column cells is topologically altered to achieve input feeding phase equalization. The electrical length between the ground to the ground stage of a 2n-column cells is topologically altered to achieve distance equalization. The rows of transistors of a 2n-column cells are staggered to achieve more uniformed heat dissipation.
机译:为了本发明的目的,射频单片功率放大器的布局技术是为了改善射频单片功率放大器的热和电性能。本发明的装置包括本发明的主要部件,以利用布局技术来改善热性能和电性能。发明了一种称为输入馈电相位均衡器的技术,以实现更好的散热性能。发明了第二种技术,称为接地均衡器,以实现更好的电气性能。发明了第三种技术,称为交错晶体管列,以实现更好的散热性能。拓扑上更改 2 n列单元的输入到输入级之间的电气长度,以实现输入馈电相位均衡。拓扑更改 2 n列单元的接地与接地级之间的电气长度,以实现距离均衡。 2 n列单元的晶体管行交错排列以实现更均匀的散热。

著录项

  • 公开/公告号US6844783B2

    专利类型

  • 公开/公告日2005-01-18

    原文格式PDF

  • 申请/专利权人 KANG WU;HOWARD J. SUN;

    申请/专利号US20020213007

  • 发明设计人 KANG WU;HOWARD J. SUN;

    申请日2002-08-06

  • 分类号H03F314;H03F368;

  • 国家 US

  • 入库时间 2022-08-21 22:20:18

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