首页>
外国专利>
Dual reference cell sensing scheme for non-volatile memory
Dual reference cell sensing scheme for non-volatile memory
展开▼
机译:非易失性存储器的双参考单元传感方案
展开▼
页面导航
摘要
著录项
相似文献
摘要
The present invention provides a dual reference cell sensing scheme for non-volatile memory. A high voltage reference cell and a low voltage reference cell are individually coupled to two sense amplifiers for providing two distinct reference voltages for comparison against the memory cell voltage. The output of the two sense amplifiers is further connected to a second stage sense amplifier to determine the status of the memory. The dual reference cell sensing scheme provides an increased sensing window which increases performance under low voltage application. The dual reference cell sensing scheme can be implemented by either voltage-based, current-based, or ground.
展开▼