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Semiconductor device having low interface state density and method for fabricating the same
Semiconductor device having low interface state density and method for fabricating the same
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机译:具有低界面态密度的半导体器件及其制造方法
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摘要
The semiconductor device comprises an intermediate layer formed on a semiconductor substrate 6, the intermediate layer 12 being formed of an oxide containing a first element which is either of a III group element and a V group element, an insulation film formed on the intermediate layer, the insulation film being formed of an oxide of a second element which is the other of the III group element and the V group element, and an electrode 16 formed on the insulation film. Because the intermediate layer of the oxide containing the first element is formed, even when the gate insulation film is formed of Al2O3 or others, the interface state density can be depressed to be low. Thus, the semiconductor device can have low interface state density and small flat band voltage shift even when Al2O3, etc. is used as a material of the insulation film.
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机译:该半导体器件包括形成在半导体衬底 6 B>上的中间层,该中间层 12 B>由包含第一元素的氧化物形成,该第一元素是III族元素和V族元素,形成在中间层上的绝缘膜,由III族元素和V族元素中的另一个构成的第二元素的氧化物和电极 16 sub>形成。 B>形成在绝缘膜上。因为形成了包含第一元素的氧化物的中间层,所以即使当栅极绝缘膜由Al 2 Sub> O 3 Sub>或其他形成时,界面态密度也可以为沮丧要低。因此,即使将Al 2 Sub> O 3 Sub>等用作绝缘膜的材料,该半导体器件也可以具有低的界面态密度和小的平带电压漂移。
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