Semiconductor laser device with a current non-injection region near a resonator end face, and fabrication method thereof

摘要

An n-GaAs buffer layer, an n-AlGaAs lower cladding layer, an n- or i-InGaP lower optical waveguide layer, an InGaAsP quantum cell active layer, a p- or i-InGaP upper optical waveguide layer, a p-AlGaAs first upper cladding layer, a p- or i-InGaP etch-stopping layer, a p-AlGaAs second upper cladding layer, and a p-GaAs contact layer, are grown upon an n-GaAs substrate. A photoresist is coated on the wafer, and two grooves are formed by etching. Then, the photoresist on the perimeter of the device is removed and the contact layer is selectively etched. Next, the photoresist is lifted off. A SiO₂ film is formed on the entire surface. After a window is formed in a portion of the SiO₂ film corresponding to a ridge portion, a p-electrode is formed on a region of the SiO₂ film other than the device perimeter.