METHOD FOR OBTAINING GALLIUM NITRIDE FILMS BY CONVERTING GALLIUM ARSENIDE BY MEANS OF NITRIDATION.

摘要

Described is a method for obtaining gallium nitride (GaN) films by heating gallium arsenide (GaAs) wafers in an atmosphere presenting ammonia (NH3) and hydrogen at high temperatures and low pressures. The aforesaid method is useful for easily obtaining GaN films with properties suitable to be used as semiconductors.