METHOD FOR FABRICATING AN ELECTRICALLY ADDRESSABLE SILICON-ON-SAPPHIRE LIGHT VALVE

摘要

A method for fabricating a monolithically integrated liquid crystal arraydisplay and control circuitry on a silicon-on-sapphire structurecomprises the steps of: a) forming an epitaxial silicon layer (40) on asapphire substrate (30) to create a silicon-on-sapphire structure; b)ion implanting the epitaxial silicon layer; c) annealing the silicon-on-sapphire structure; d) oxidizing the epitaxial silicon layer to form asilicon dioxide layer from portion of the epitaxial silicon layer so that athinned epitaxial silicon layer remains; e) removing the silicondioxide layer to expose the thinned epitaxial silicon layer, f) fabricating anarray of pixels (122) from the thinned epitaxial silicon layer;and g) fabricating integrated circuit (124, 126) from the thinned epitaxialsilicon layer which is operably coupled to modulate the pixels.The thinned epitaxial silicon layer supports the fabrication of device qualitycircuitry which is used to control the operation of the pixels.