METHOD FOR PRODUCING A SUBLITHOGRAPHIC GATE STRUCTURE FOR FIELD EFFECT TRANSISTORS, AND FOR PRODUCING AN ASSOCIATED FIELD EFFECT TRANSISTOR, AN ASSOCIATED INVERTER, AND AN ASSOCIATED INVERTER STRUCTURE

摘要

The invention relates to a method for producing: a sublithographic gate structure; an associated field effect transistor; an associated inverter, and; an associated inverter structure. A sublithographic gate structure (SG) having slight variations in the critical dimensions thereof can be directly produced on the lateral walls of a lithographically structured mask (M0, 2) by the conformal formation of a gate insulation layer (3) and of a gate layer with subsequently executed anisotropic etching.