FORMATION OF HIGHLY DISLOCATION FREE COMPOUND SEMICONDUCTOR ON A LATTICE MISMATCHED SUBSTRATE

摘要

A highly dislocation free compound semiconductor, e.g. AlxInyGa1-x-yN (0x, y1), is formed on a lattice mismatched substrate, 24 e.g. Si, by first depositing a polycrystalline buffer layer 22 on the substrate. An amorphous layer 28 is then created at the interface of the substrate and the polycrystalline buffer layer, e.g. through ion implantation. A monocrystalline template layer 30 of the compound semiconductor is then deposited on the buffer layer, and an epilayer 32 of the compound semiconductor is grown on the template layer. A compound semiconductor based device structure may be formed in the epilayer.