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METHOD AND APPARATUS FOR REAL-TIME IN-SITU ION IMPLANTATION WITH CLOSED LOOP CONTROL
METHOD AND APPARATUS FOR REAL-TIME IN-SITU ION IMPLANTATION WITH CLOSED LOOP CONTROL
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机译:闭环控制实时原位植入的方法和装置
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摘要
The invention relates to a method and apparatus for real-time in-situ implantation and measurement incorporating a feedback loop to adjust the implantation dose of a substrate during the manufacturing and testing of semiconductor wafers. During processing, the substrate, such as a silicon wafer, is transported between a measuring device and an implantation device multiple times to ensure that where the beam from the implantation device hits the substrate, the doping concentration falls within the range of desired parameters.
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