首页> 外国专利> FABRICATION OF PERIODIC SURFACE STRUCTURES WITH NANOMETER-SCALE SPACINGS

FABRICATION OF PERIODIC SURFACE STRUCTURES WITH NANOMETER-SCALE SPACINGS

机译:用纳米尺度间距制造周期表面结构

摘要

The periodic stress and strain fields produced by a pure twist grain boundary between two single crystals bonded together in the form of a bicrystal are used to fabricate a two-dimensional surface topography with controllable, nanometer-scale feature spacings (e.g., from 50 nanometers down to 1.5 nanometers). The spacing of the features is controlled by the misorientation angle used during crystal bonding. One of the crystals is selected to be thin, on the order of 5-100 nanometers. A buried periodic array of screw dislocations is formed at the twist grain boundary. To bring the buried periodicity to the surface, the thin single crystal is etched to reveal an array of raised elements, such as pyramids, that have nanometer-scale dimensions. The process can be employed with numerous materials, such as gold, silicon and sapphire. In addition, the process can be used with different materials for each crystal such that a periodic array of misfit dislocations is formed at the interface between the two crystals.
机译:由以双晶形式键合在一起的两个单晶之间的纯扭曲晶粒边界产生的周期性应力和应变场用于制造具有可控制的纳米级特征间距(例如,从50纳米向下)的二维表面形貌至1.5纳米)。特征的间距由晶体键合期间使用的取向差角控制。选择其中一种晶体是薄的,大约在5到100纳米之间。螺旋位错的掩埋周期性阵列形成在扭曲晶粒边界处。为了将埋入的周期性带到表面,对薄单晶进行蚀刻以显示一系列具有纳米级尺寸的凸起元素,例如金字塔。该方法可用于多种材料,例如金,硅和蓝宝石。另外,该方法可以对每个晶体使用不同的材料,从而在两个晶体之间的界面处形成错配位错的周期性阵列。

著录项

  • 公开/公告号EP1165864A4

    专利类型

  • 公开/公告日2005-09-28

    原文格式PDF

  • 申请/专利权人 CORNELL RESEARCH FOUNDATION INC.;

    申请/专利号EP20000983788

  • 申请日2000-12-07

  • 分类号C30B33/00;C30B33/06;C30B33/08;C30B29/06;C30B29/02;G11B5/84;H01F1/00;H01F41/30;

  • 国家 EP

  • 入库时间 2022-08-21 22:10:12

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