SEMICONDUCTOR LASER COUPLABLE TO SINGLE MODE OPTICAL FIBER AT HIGH COUPLING EFFICIENCY

摘要

A semiconductor laser is provided with a board made of InP, an activation layer formed on the board with a width of 7-14μm, including a multiquantum well structure, an n-type clad layer made of InGaAsP and a p-type clad layer made of InP formed on the board, having the activation layer between. The semiconductor laser oscillates only in basic transverse mode, and beams projected from a projection edge part can be optically coupled with an external single mode optical fiber.