N-TYPE METAL OXIDE SEMICONDUCTOR SPECTRALLY SENSITIZED WITH A CATIONIC SPECTRAL SENSITIZER

摘要

Layer configuration includes that the metal-oxide semiconductor (MOS) of one layer of nanoporous N-type and band gap are greater than 2.The eutectoid content of 7 electron volts, the cationic spectral sensitizer of absorption can enhance Liquidity limit spectral sensitizer, in N-type MOS transistor; The preparation method of this layer configuration, comprising steps of the metal-oxide semiconductor (MOS) and band gap that provide one layer of nanoporous N-type are greater than 2.7 electron-volts, the nanoporous n-type metal oxide semiconductor layer of Adsorption coadsorption and the nanoporous n-type metal oxide semiconductor layer for having adsorbed cationic spectral sensitizer.